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document number: MMA6361L rev 1, 08/2011 freescale semiconductor data sheet: technical data ? freescale semiconductor, inc., 2010, 2011. all rights reserved. 1.5g, 6g two axis low-g micromachined accelerometer the MMA6361L is a low power, low profile capacitive micromachined accelerometer featuring signal conditioning, a 1-pole low pass filter, temperature compensation, and g-sele ct which allows for the selection between two sensitivities. zero-g offs et and sensitivity are factory set and require no external devices. the MMA6361L includes a sleep mode that makes it ideal for handheld battery powered electronics. features ? 3mm x 5mm x 1.0mm lga-14 package ? low current consumption: 400 a ? sleep mode: 3 a ? low voltage operation: 2.2 v ? 3.6 v ? high sensitivity (800 mv/g @ 1.5g) ? selectable sensitivity (1.5g, 6g) ? fast turn on time (0.5 ms enable response time) ? signal conditioning with low pass filter ? robust design, high shocks survivability ? rohs compliant ? environmentally preferred product ? low cost typical applications ? 3d gaming: tilt and motion sensing, event recorder ? hdd mp3 player ? laptop pc: anti-theft ? cell phone: image stability, text scroll, motion dialing, ecompass ? pedometer: motion sensing ? pda: text scroll ? robotics: motion sensing ordering information part number temperature range package drawing package shipping MMA6361Lt ?40 to +85c 1977-01 lga-14 tray MMA6361Lr1 ?40 to +85c 1977-01 lga-14 7? tape & reel MMA6361Lr2 ?40 to +85c 1977-01 lga-14 13? tape & reel MMA6361L MMA6361L: xy axis accelerometer 1.5g, 6g 14 lead lga case 1977-01 bottom view figure 1. pin connections top view 123456 7 8 9 10 11 12 13 14 n/c x out y out v ss v dd sleep n/c gnd n/c n/c n/c g-select n/c n/c
sensors 2 freescale semiconductor MMA6361L figure 2. simplified accelerometer functional block diagram electro static discharge (esd) warning: this device is se nsitive to electrostatic discharge. although the freescale accelerometer contains internal 2000 v esd protection circuitry, extra precaution must be taken by the user to protect the chip from esd. a charge of over 2000 volts can accumulate on the human body or associated test equipment. a charge of this magnitude can alter the performance or cause failure of the chip. when handling the accelerometer, proper esd precautions should be followed to avoid exposing the device to discharges which may be detrimental to its performance. table 1. maximum ratings (maximum ratings are the limits to which the device can be exposed without ca using permanent damage.) rating symbol value unit maximum acceleration (all axis) g max 5000 g supply voltage v dd ?0.3 to +3.6 v drop test (1) 1. dropped onto concrete surface from any axis. d drop 1.8 m storage temperature range t stg ?40 to +125 c c to v converter x out y out oscillator clock gen sleep x-temp comp g-ce ll sensor gain + filter control logic nvm trim circuits y-temp comp v dd v ss
sensors freescale semiconductor 3 MMA6361L table 2. operating characteristics unless otherwise noted: -40c < t a < 85c, 2.2 v < v dd < 3.6 v, acceleration = 0g, loaded output (1) characteristic symbol min typ max unit operating range (2) supply voltage (3) supply current (4) supply current at sleep mode (4) operating temperature range acceleration range, x-axis, y-axis, z-axis g-select: 0 g-select: 1 v dd i dd i dd t a g fs g fs 2.2 ? ? -40 ? ? 3.3 400 3 ? 1.5 6.0 3.6 600 10 +85 ? ? v a a c g g output signal zero-g (t a = 25c, v dd = 3.3 v) (5), (6) zero-g (7) sensitivity (t a = 25c, v dd = 3.3 v) 1.5g 6g sensitivity (4) bandwidth response xy output impedance v off v off , t a s 1.5g s 6g s,t a f -3dbxy z o 1.485 -2.0 740 190.6 -0.0075 ? ? 1.65 0.5 800 206 0.002 400 32 1.815 +2.0 860 221.5 +0.0075 ? ? v mg/c mv/g mv/g %/c hz k noise power spectral density rms (0.1 hz ? 1 khz) (4) n psd ? 350 ? g/ control timing power-up response time (8) enable response time (9) sensing element resonant frequency xy internal sampling frequency t response t enable f gcellxy f clk ? ? ? ? 1.0 0.5 6.0 11 2.0 2.0 ? ? ms ms khz khz output stage performance full-scale output range (i out = 3 a) v fso v ss +0.1 ? v dd ?0.1 v nonlinearity, x out , y out , z out nl out -1.0 ? +1.0 %fso cross-axis sensitivity (10) v xy, xz, yz -5.0 ? +5.0 % 1. for a loaded output, the measurements are observed a fter an rc filter consisting of an internal 32 k resistor and an external 3.3 nf capacitor (recommended as a minimum to filter clock noise) on the analog output for each axis and a 0.1 f capacitor on v dd - gnd. the output sensor bandwidth is determined by the capacitor added on the output. f = 1/2 * (32 x 10 3 ) * c. c = 3.3 nf corresponds to bw = 1507 hz, which is the minimum to filter out internal clock noise. 2. these limits define the range of operation fo r which the part will meet specification. 3. within the supply range of 2.2 and 3.6 v, the device operates as a fully calibrated linear accelerometer. beyond these suppl y limits the device may operate as a linear device but is not guaranteed to be in calibration. 4. this value is measured with g-select in 1.5g mode. 5. the device can measure both + and ? acceleration. with no input acceleration the output is at midsupply. for positive accele ration the output will increase above v dd /2. for negative acceleration, the output will decrease below v dd /2. 6. for optimal 0g offset performance, adhere to an3484 and an3447 7.product performance will not exceed this minimum level, however measurement over time will not be equal to time zero measurem ents for this specific parameter. 8. the response time between 10% of full scale v dd input voltage and 90% of the final operating output voltage. 9. the response time between 10% of full scale sleep mode input voltage and 90% of the final operating output voltage. 10. a measure of the device?s ability to reject an acce leration applied 90 from the true axis of sensitivity. hz
sensors 4 freescale semiconductor MMA6361L principle of operation the freescale accelerometer is a surface-micromachined integrated-circuit accelerometer. the device consists of a surface micromachined capacitive sensing cell (g-cell) and a signal conditioning asic contained in a single package. the sensing element is sealed hermetically at the wafer level using a bulk micromachined cap wafer. the g-cell is a mechanical structure formed from semiconductor materials (polysilicon) using semiconductor processes (masking and etching). it can be modeled as a set of beams attached to a movable central mass that move between fixed beams. the movable beams can be deflected from their rest position by subjecting the system to an acceleration ( figure 3 ). as the beams attached to the central mass move, the distance from them to the fixed beams on one side will increase by the same amount that the distance to the fixed beams on the other side decreases. the change in distance is a measure of acceleration. the g-cell beams form two back-to-back capacitors ( figure 3 ). as the center beam mo ves with acceleration, the distance between the beams changes and each capacitor's value will change, (c = a /d). where a is the area of the beam, is the dielectric consta nt, and d is the distance between the beams. the asic uses switched capacitor techniques to measure the g-cell capacitors and extract the acceleration data from the difference between the two capacitors. the asic also signal conditions and filters (s witched capacitor) the signal, providing a high level output voltage that is ratiometric and proportional to acceleration. figure 3. simplified transducer physical model special features g-select the g-select feature allows for the selection between two sensitivities. depending on the logic input placed on pin 10, the device internal gain will be changed allowing it to function with a 1.5g or 6g sensitivity ( table 3 ). this feature is ideal when a product has applicatio ns requiring two different sensitivities for optimum performance. the sensitivity can be changed at anytime during the operation of the product. the g-select pin can be left unconnected for applications requiring only a 1.5g sensitivit y as the device has an internal pull-down to keep it at that sensitivity (800 mv/g). sleep mode the 2 axis accelerometer provides a sleep mode that is ideal for battery operated products. when sleep mode is active, the device outputs are turned off, providing significant reduction of operating current. a low input signal on pin 7 (sleep mode) will place the device in this mode and reduce the current to 3 a typ. for lower power consumption, it is recommended to set g-select to 1.5g mode. by placing a high input signal on pin 7, the device will resume to normal mode of operation. filtering the 2 axis accelerometer contains an onboard single-pole switched capacitor filter. becaus e the filter is realized using switched capacitor techniques, there is no requirement for external passive components (resistors and capacitors) to set the cut-off frequency. ratiometricity ratiometricity simply means the output offset voltage and sensitivity will scale linearly with applied supply voltage. that is, as supply voltage is increa sed, the sensitivity and offset increase linearly; as supply voltage decreases, offset and sensitivity decrease linearly. this is a key feature when interfacing to a microcontrolle r or an a/d converter because it provides system level cancella tion of supply induced errors in the analog to digital conversion process. acceleration table 3. g-select pin description g-select g-range sensitivity 0 1.5g 800 mv/g 1 6g 206 mv/g
sensors freescale semiconductor 5 MMA6361L basic connections pin descriptions figure 4. pinout description figure 5. accelerome ter with recommended connection diagram pcb layout figure 6. recommended pcb layout for interfacing accelerometer to microcontroller notes: 1. use 0.1 f capacitor on v dd to decouple the power source. 2. physical coupling distance of the accelerometer to the microcontroller should be minimal. 3. place a ground plane beneath the accelerometer to reduce noise, the ground plane should be attached to all of the open ended terminals shown in figure 6 . 4. use a 3.3 nf capacitor on the outputs of the accelerometer to minimize clock noise (from the switched capacitor filter circuit). 5. pcb layout of power and ground should not couple power supply noise. 6. accelerometer and microcontroller should not be a high current path. 7. a/d sampling rate and any external power supply switching frequency should be selected such that they do not interfere with the internal accelerometer sampling frequency (11 khz for the sampling frequency). this will prevent aliasing errors. 8. 10 m or higher is recommended on x out , y out and z out to prevent loss due to the voltage divider relationship between the internal 32 k resistor and the measurement input impedance. table 4. pin descriptions pin no. pin name description 1 n/c no internal connection. leave unconnected. 2x out x direction output voltage. 3y out y direction output voltage, 4 n/c unused for factory trim. leave unconnected. 5 v ss power supply ground. 6v dd power supply input. 7sleep logic input pin to enable product or sleep mode 8 nc no internal connection. leave unconnected. 9 n/c no internal connection. leave unconnected. 10 g-select logic input pin to select g level 11 n/c unused for factory trim. leave unconnected. 12 n/c unused for factory trim. leave unconnected. 13 gnd connect to ground. 14 n/c unused for factory trim. leave unconnected. 123456 7 8 9 10 11 12 13 14 n/c x out y out v ss v dd sleep n/c gnd n/c n/c n/c g-select n/c n/c top view 2 3 3.3 nf 3.3 nf 13 6 5 7 logic input 0.1 f v dd v dd v ss gnd sleep x out y out MMA6361L 10 logic input g-select power supply v dd v ss sleep g-select x out y out accelerometer v dd v ss v rh p0 p1 a/d in a/d in c c c c c microcontroller c c gnd
sensors 6 freescale semiconductor MMA6361L top view +y -y +x -x : arrow indicates direction of package movement. 14-pin lga package 123456 7 8 9 10 11 12 13 14 dynamic acceleration side view x out @ 0g = 1.65 v y out @ +1g = 2.45 v z out @ 0g = 1.65 v x out @ +1g = 2.45 v y out @ 0g = 1.65 v z out @ 0g = 1.65 v x out @ -1g = 0.85 v y out @ 0g = 1.65 v z out @0g=1.65v x out @ 0g = 1.65 v y out @ -1g = 0.85 v z out @ 0g = 1.65 v direction of earth's gravity field.* top view x out @ 0g = 1.65 v y out @ 0g = 1.65 v z out @ -1g =0.85 v x out @ 0g = 1.65 v y out @ 0g = 1.65 v z out @ +1g = 2.45 v to p to p bottom bottom 123456 7 8 9 10 11 12 13 14 123456 7 8 9 10 11 12 13 14 13 12 11 10 9 8 12 34 56 14 7 123456 7 8 9 10 11 12 13 14 static acc eleration * when positioned as shown, the earth?s grav ity will result in a positive 1g output.
sensors freescale semiconductor 7 MMA6361L figure 7. MMA6361L temperature co efficient of offset (tco) and temperature coefficient of sensitivity (tcs) distribution charts ls l usl target -2 -1 0 1 2 x-tco mg/degc ls l usl target -2 -1 0 1 2 y-tco mg/degc ls l usl target -0.01 -0.005 0 .005 .01 x-tcs %/degc ls l usl target -0.01 -0.005 0 .005 .01 y-tcs %/degc
sensors 8 freescale semiconductor MMA6361L minimum recommended footprint fo r surface mounted applications pcb mounting recommendations mems based sensors are sens itive to printed circuit board (pcb) reflow processes. fo r optimal zero-g offset after pcb mounting, care must be taken to pcb layout and reflow conditions. reference application note an3484 for best practices to minimize the zero-g offset shift after pcb mounting. surface mount board la yout is a critical portion of the total design. the footprint for the surface mount packages must be the correct size to ensure proper solder connection interface between the board and the package. with the correct footprint, the packages will self-align when subjected to a solder reflow process. it is always recommended to design boards with a solder mask layer to avoid bridging and shorting between solder pads. 6x2 12x1 14x0.9 14x0.6 10x0.8 1 13 6 8
sensors freescale semiconductor 9 MMA6361L package dimensions case 1977-01 issue a 14-lead lga
sensors 10 freescale semiconductor MMA6361L package dimensions case 1977-01 issue a 14-lead lga
MMA6361L rev. 1 08/2011 rohs-compliant and/or pb-free versions of freesc ale products have the functi onality and electrical characteristics of their non-rohs-compliant and/or non-pb-free counterparts. for further information, see http:/www.freescale.com or contact your freescale sales representative. for information on freescale?s environmental products program, go to http://www.freescale.com/epp. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1-8-1, shimo-meguro, meguro-ku, tokyo 153-0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor lite rature distribution center 1-800-441-2447 or +1-303-675-2140 fax: +1-303-675-2150 ldcforfreescalesemiconductor@hibbertgroup.com information in this document is provided solely to enable system and software implementers to use freescale semiconduc tor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability ar ising out of the application or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data s heets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale se miconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the fa ilure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemni fy and hold freescale semiconductor and its officers, employees, subsidiaries, affili ates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. xtrinsic is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2011. all rights reserved.

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